STL23NM60ND STMicroelectronics, STL23NM60ND Datasheet - Page 5

• Manufacturer Part Number: STL23NM60ND
• Description: MOSFET N-CH 600V 19.5A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STL23NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 50V
• Power - Max: 3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11205-2

STL23NM60ND
Table 6.
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 17439 Rev 1
I
I
V
(see
V
di/dt =100 A/µs, I
T
(see
SD
SD
j
DD
DD
V
R
(see
= 150 °C
DD
= 19.5 A, V
= 19.5 A, di/dt =100 A/µs,
G
= 100 V
= 100 V
Figure
Figure
= 4.7 Ω, V
Test conditions
= 300 V, I
Figure
Test conditions
4)
4)
2)
GS
GS
D
SD
=0
= 10 A,
= 10 V
= 19.5 A,
Electrical characteristics
Min.
Min. Typ. Max. Unit
-
-
-
-
-
Typ.
190
260
1.2
2.0
25
45
90
40
13
15
19.5
Max. Unit
1.3
78
-
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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