STL23NM60ND STMicroelectronics, STL23NM60ND Datasheet

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STL23NM60ND

Manufacturer Part Number
STL23NM60ND
Description
MOSFET N-CH 600V 19.5A POWERFLAT
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STL23NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 50V
Power - Max
3W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11205-2

Available stocks

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Manufacturer
Quantity
Price
Part Number:
STL23NM60ND
Manufacturer:
ST
Quantity:
1 000
Part Number:
STL23NM60ND
Manufacturer:
ST
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Part Number:
STL23NM60ND
Manufacturer:
ST
Quantity:
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Features
1. This value is rated according to R
Application
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1.
April 2010
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STL23NM60ND
The worldwide best R
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
Switching applications
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET
Type
STL23NM60ND
Order code
Device summary
(@T
650 V
V
DSS
jmax
DS(on)
)
R
< 0.180 Ω
DS(on)
thj-case.
* area amongst the
max
23NM60ND
Marking
19.5 A
(with fast diode) PowerFLAT™ (8x8) HV
Doc ID 17439 Rev 1
I
D
(1)
Figure 1.
PowerFLAT™ 8x8 HV
Package
Internal schematic diagram
STL23NM60ND
Tape and reel
Packaging
Preliminary data
www.st.com
1/11
11

Related parts for STL23NM60ND

STL23NM60ND Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. (with fast diode) PowerFLAT™ (8x8) HV max I DS(on) D (1) 19.5 A thj-case. * area amongst the Figure 1. Marking 23NM60ND PowerFLAT™ 8x8 HV Doc ID 17439 Rev 1 STL23NM60ND Preliminary data Internal schematic diagram Package Packaging Tape and reel 1/11 www.st.com 11 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/ Doc ID 17439 Rev 1 STL23NM60ND ...

Page 3

... STL23NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (1),(2) I Drain current (pulsed) DM (3) I Drain current (continuous (3) I Drain current (continuous (2),(3) I Drain current (pulsed) DM (3) P Total dissipation at T TOT ...

Page 4

... Max rating,@125 ° ± Parameter Test conditions MHz f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain V = 480 Figure (see DSS Doc ID 17439 Rev 1 STL23NM60ND Min. Typ 600 250 µ 0.150 0.180 D Min. Typ. 2050 - 480 V - 318 - oss Max. Unit V V/ns 1 µ ...

Page 5

... STL23NM60ND Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Figure 5. 3.3 1000 µF µ AM01470v1 Figure 7. V (BR)DSS 10% 0 AM01472v1 Doc ID 17439 Rev 1 STL23NM60ND Gate charge test circuit 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ Unclamped inductive load test circuit 2200 3.3 µ ...

Page 7

... STL23NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17439 Rev 1 Package mechanical data ® 7/11 ...

Page 8

... PowerFLAT™ 8x8 HV drawing mechanical data PIN#1 ID 0.08 C 8/11 Min. 0.80 0.95 7.05 4.15 0.40 e BOTTOM VIEW b D2 INDEX AREA TOP VIEW Doc ID 17439 Rev 1 STL23NM60ND mm Typ. Max. 0.90 1.00 0.02 0.05 1.00 1.05 0.10 8.00 8.00 7.20 7.30 4.30 4.40 2 ...

Page 9

... STL23NM60ND Figure 9. PowerFLAT™ 8x8 HV recommended footprint 7.30 2.00 Doc ID 17439 Rev 1 Package mechanical data 1.05 AM05543v1 9/11 ...

Page 10

... Revision history 5 Revision history Table 9. Document revision history Date 28-Apr-2010 10/11 Revision 1 First release Doc ID 17439 Rev 1 STL23NM60ND Changes ...

Page 11

... STL23NM60ND Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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