STB24NM60N STMicroelectronics, STB24NM60N Datasheet - Page 4

• Manufacturer Part Number: STB24NM60N
• Description: MOSFET N-CH 600V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11211-2

Electrical characteristics
2
4/15
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
V
oss eq.
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
DSS
GSS
Q
R
o(eff).
oss
rss
iss
gs
gd
g
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
.
= 0)
Doc ID 010008 Rev 1
V
V
V
f=1 MHz open drain
V
V
(see Figure 15)
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 480 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 250 µA
= 8 A
= 0
= 17 A,
GS
C
=125 °C
= 0
Min.
Min.
600
2
-
-
-
-
0.168
1400
Typ.
Typ.
190
7.4
44
46
23
5
7
3
oss
STB24NM60N
when V
Max.
Max.
0.19
100
100
1
4
-
-
-
-
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω