STB24NM60N STMicroelectronics, STB24NM60N Datasheet - Page 3

• Manufacturer Part Number: STB24NM60N
• Description: MOSFET N-CH 600V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11211-2

STB24NM60N
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area.
2. I
Table 3.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
R
Symbol
Symbol
Symbol
R
dv/dt
thj-pcb
I
DM
P
SD
thj-case
V
E
T
I
T
I
I
TOT
AS
GS
stg
AS
D
D
J
(1)
(2)
≤ 17 A, di/dt ≤ 400 A/µs, peak V
(1)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
Absolute maximum ratings
Thermal data
Avalanche characteristics
J
= 25 °C, I
Doc ID 010008 Rev 1
Parameter
Parameter
Parameter
C
D
= 25 °C
= I
J
DS
max)
AS
≤ V
, V
(BR)DSS
C
C
DD
= 25 °C
= 100 °C
= 50 V)
, V
DD
= 80% V
(BR)DSS
-55 to 150
Value
Value
Value
± 30
125
300
15
17
11
68
30
6
1
Electrical ratings
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
W
A
V
A
A
A
3/15