TIM1414-8L Toshiba, TIM1414-8L Datasheet
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TIM1414-8L
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TIM1414-8L Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1414-8L HIGH GAIN G1dB=5 14.0 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED FET ...
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... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11C1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-8L SYMBOL UNIT ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V IDS≅3.4A 41 Pin=34.5 dBm Output Power(Pout) vs. Input Power(Pin) 42 freq.=14.5GHz 41 VDS=9V IDS≅3. TIM1414-8L 14.0 14.25 Frequency(GHz) Pout ηadd 31 33 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc IM3 vs. Output Power Characteristics -10 VDS=9V freq.=14.5GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM1414-8L 80 120 Tc( ° 160 200 31 33 ...