TIM1414-10LA-252 Toshiba, TIM1414-10LA-252 Datasheet

TIM1414-10LA-252

Manufacturer Part Number

TIM1414-10LA-252

Description

Manufacturer

Toshiba

Datasheet

1.TIM1414-10LA-252.pdf (4 pages)

Specifications of TIM1414-10LA-252

Configuration

Single

Gate-source Voltage (max)

Drain-source Volt (max)

15V

Operating Temperature Classification

Military

Pin Count

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TIM1414-10LA-252

Manufacturer:

Quantity:

1 400

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )

ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

Distortion

Drain Current

Channel Temperature Rise

Recommended gate resistance(Rg) : Rg= 100 Ω ( MAX.)

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

FEATURES

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

HIGH POWER

HIGH GAIN

P1dB=39.5dBm at 13.75GHz to 14.5GHz

G1dB=5.5dB at 13.75GHz to 14.5GHz

CHARACTERISTICS

Order Intermodulation

SYMBOL

ΔTch

IDS2

th(c-c)

IM3

GSoff

DS1

DSS

ΔG

GSO

1dB

add

VDS= 3V

IDS= 4.8A

VDS= 3V

IDS= 145mA

VDS= 3V

VGS=0V

IGS= -145 μ A

f= 13.75 to 14.5GHz

Channel to Case

(Single Carrier Level)

CONDITIONS

Two-Tone Test

CONDITIONS

Po=29.0 dBm

X I

VDS= 9V

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

MICROWAVE POWER GaAs FET

X R

TIM1414-10LA-252

th(c-c)

UNIT

° C/W

dBm

dBc

° C

MIN.

39.0

MIN.

-2.0

-42

4.5

⎯

-5

TYP. MAX.

Rev. Sep. 2003

39.5

TYP. MAX.

2800

10.0

-45

5.5

4.0

-3.5

2.0

⎯

±0.8

5.0

-5.0

⎯

2.5

⎯

Related parts for TIM1414-10LA-252

TIM1414-10LA-252 Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1414-10LA-252 BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11C1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-10LA-252 SYMBOL ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V IDS≅4.0A 41 Pin=34.0dBm 13.75 Output Power(Pout) vs. Input Power(Pin) 43 freq.=14.5GHz 42 VDS=9V IDS≅4. TIM1414-10LA-252 14.0 14.25 Frequency(GHz) Pout ηadd 31 33 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc IM3 vs. Output Power Characteristics -10 VDS=9V freq.=14.5GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM1414-10LA-252 80 120 Tc( ° 160 200 32 34 ...

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