TIM1414-15L Toshiba, TIM1414-15L Datasheet

TIM1414-15L

Manufacturer Part Number

TIM1414-15L

Description

Microwave Power GaAs FET

Manufacturer

Toshiba

Datasheet

1.TIM1414-15L.pdf (5 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TIM1414-15L

Manufacturer:

Toshiba

Quantity:

1 400

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DataSheet

TOSHIBA

MICROWAVE POWER GaAs FET

PRELIMINARY

Features

• Low intermodulation distortion

• High power

• High gain

• Broadband internally matched

• Hermetically sealed package

RF Performance Speciﬁcations (T

Note 1: 2-tone Test Pout, Po = 30.0 dBm Single Carrier Level.

Electrical Characteristics (T

The information contained here is subject to change without notice.

The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties

which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic

equipments (ofﬁce equipment, communication equipment, measuring equipment, domestic electriﬁcation, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-

ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, trafﬁc signal, combustion control, all types

of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.

TOSHIBA CORPORATION

Output Power at 1dB Compression

Point

Power Gain at 1dB Compression

Point

Drain Current

Gain Flatness

Power Added Efﬁciency

3rd Order Intermodulation Distortion

Drain Current

Channel-Temperature Rise

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown Voltage

Thermal Resistance

- IM

- P

- G

.com

1dB

= -45 dBc at Po = 30.0 dBm, Single Carrier Level

= 42.0 dBm at 14.0 GHz to 14.5 GHz

= 6.0 dB at 14.0 GHz to 14.5 GHz

Characteristic

= 25 C)

Symbol

th (c-c)

GSoff

DSS

GSO

DS1

DS2

1dB

add

1dB

DataSheet4U.com

f = 14.0 ~ 14.5 GHz

Channel to Case

x I

Condition

Note 1

= -145 A

= 145 mA

= 4.8A

= 9V

= 3V

= 0V

x R

th (c-c)

DataSheet4U.com

dBm

dBc

Unit

C/W

Unit

41.0

Min.

-1.5

-42

5.0

-5

–

MW50380196

3000

42.0

10.0

Typ.

-3.0

-45

Typ.

6.0

4.5

2.0

–

TIM1414-15L

Max.

11.5

100

-4.5

5.5

2.5

0.8

–

1/5

Related parts for TIM1414-15L

TIM1414-15L Summary of contents

Page 1

... C) a Symbol Condition 4. GSoff I = 145 DSS -145 A GSO GS R Channel to Case th (c-c) TIM1414-15L Unit Min. Typ. Max. dBm 41.0 42.0 dB 5.0 6.0 A – 4.5 5.5 dB – – % – 29 dBc -42 -45 A – 4.5 5.5 C – – 100 Unit Min. Typ. ...

Page 2

... TIM1414-15L Absolute Maximum Ratings (T Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation ( Channel Temperature Storage Temperature Package Outline (2-11C1B) Handling Precautions for Packaged Type Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 DataSheet4U ...

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TIM1414-15L datasheet download

TIM1414-15L Toshiba, TIM1414-15L Datasheet

TIM1414-15L

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TIM1414-15L Summary of contents

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