MWI225-12E9 IXYS, MWI225-12E9 Datasheet - Page 5

• Manufacturer Part Number: MWI225-12E9
• Description: Discrete Semiconductor Modules 225 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI225-12E9

• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 355
• Ic80, Tc = 80°c, Igbt, (a): 250
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 21
• Rthjc, Max, Igbt, (k/w): 0.09
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 205
• Package Style: E+
• Lead Free Status / RoHS Status: Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
E
[mJ]
[mJ]
[mJ]
E
E
rec(off)
120
80
60
40
20
90
60
30
12
10
0
0
8
6
4
500
0
0
Fig. 9 Typ. turn on energy and switching times
Fig. 11 Typ. turn off energy and recovered charge
Fig. 7 Typ. turn on energy and switching times
V
V
I
T
V
I
T
C
F
VJ
CE
GE
E rec(off)
VJ
R
= 200 A
E
E
= 125°C
= 600 V
1000
= ±15 V
= 125°C
= 600 V
= ±15 V
rec(off)
versus gate resistor
versus collector current
on
of free wheeling diode
V
V
R
T
100
VJ
CE
GE
10
G
= 600 V
= ±15 V
= 125°C
= 3.6 Ω
1500
di/dt [A/µs]
R
I
C
200
G
20
[A]
E
[Ω]
E
rec(off)
2000
on
300
30
2500
Q rr
t
t
d(on)
t
d(on)
r
3000
400
t
40
r
240
180
120
60
0
400
300
200
100
0
30
24
18
12
6
[nC]
Q
[ns]
[ns]
t
rr
t
[K/W]
Z
[mJ]
[mJ]
thJC
E
E
off
off
0.20
0.16
0.12
0.08
0.04
0.00
50
40
30
20
10
60
50
40
30
20
10
0
0
0
1
Fig. 8 Typ. turn off energy and switching times
Fig. 10 Typ. turn off energy and switching times
Fig. 12 Typ. transient thermal impedance
E
E
off
single pulse
V
V
I
T
off
C
VJ
CE
GE
= 200 A
= 600 V
= ±15 V
= 125°C
versus collector current
versus gate resistor
100
10
10
V
V
R
T
VJ
CE
GE
G
= 600 V
= ±15 V
= 125°C
= 3.6 Ω
R
t [ms]
200
G
I
100
C
20
[Ω]
[A]
MWI 225-12 E9
1000
300
30
diode
t
IGBT
t
d(off)
d(off)
10000
t
f
t
400
f
40
1000
800
600
400
200
0
3000
2500
2000
1500
1000
500
0
20100421a
[ns]
[ns]
5 - 5
t
t