MWI225-12E9 IXYS, MWI225-12E9 Datasheet - Page 3
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MWI225-12E9
Manufacturer Part Number
MWI225-12E9
Description
Discrete Semiconductor Modules 225 Amps 1200V
Manufacturer
IXYS
Type
Six-Pack IGBT Modulesr
Datasheet
1.MWI225-12E9.pdf
(5 pages)
Specifications of MWI225-12E9
Channel Type
N
Configuration
Hex
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Product
Power Semiconductor Modules
Mounting Style
Screw
Package / Case
E+
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
355
Ic80, Tc = 80°c, Igbt, (a)
250
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.1
Eoff, Typ, Tj = 125°c, Igbt, (mj)
21
Rthjc, Max, Igbt, (k/w)
0.09
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
205
Package Style
E+
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MWI225-12E9
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
MWI225-12E9
Quantity:
60
MWI 225-12 E9
Dimensions in mm (1 mm = 0.0394")
= tolerance for all dimensions:
IXYS reserves the right to change limits, test conditions and dimensions.
20100421a
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