MWI225-12E9 IXYS, MWI225-12E9 Datasheet - Page 4

• Manufacturer Part Number: MWI225-12E9
• Description: Discrete Semiconductor Modules 225 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI225-12E9

• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 355
• Ic80, Tc = 80°c, Igbt, (a): 250
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 21
• Rthjc, Max, Igbt, (k/w): 0.09
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 205
• Package Style: E+
• Lead Free Status / RoHS Status: Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[A]
V
I
I
[V]
F
C
GE
400
300
200
100
400
300
200
100
-10
-15
-20
20
15
10
-5
0
0
5
0
0
0
0
Fig. 5 Typ. turn on gate charge
Fig. 1 Typ. forward characteristics
Fig. 3 Typ. output characteristics
T
J
= 25°C
of free wheeling diode
T
J
= 125°C
1
2
1
V
Q
V
CE
F
G
T
J
[V]
[µC]
[V]
= 25°C
11 V
13 V
15 V
17 V
19 V
V
I
C
CE
=
= 600 V
2
4
2
65 A
9 V
3
6
3
I
[A]
I
[A]
[A]
CE
I
RM
C
400
300
200
100
400
300
200
100
200
150
100
50
0
0
0
4
0
0
Fig. 2 Typ. transfer characteristics
Fig. 4 Typ. output characteristics
Fig. 6 Typ. turn off characteristics
I
RM
T
J
= 125°C
5
of free wheeling diode
T
V
I
F
J
R
6
= 125°C
= 200 A
1000
= 600 V
2
T
J
-di/dt [A/µs]
= 125°C
7
V
V
GE
CE
[V]
[V]
MWI 225-12 E9
8
T
2000
J
4
= 25°C
11 V
13 V
15 V
17 V
19 V
9
10
t
9 V
rr
3000
11
6
1200
900
600
300
0
20100421a
[ns]
4 - 5
t
rr