TIM1414-18L Toshiba, TIM1414-18L Datasheet
TIM1414-18L
Specifications of TIM1414-18L
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TIM1414-18L Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1414-18L BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
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... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-11C1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-18L SYMBOL UNIT ...
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... RF PERFORMANCE 41.7 42.1 42 41.7 ≅ I 4.4A DSQ 43 Pin= 36.5dBm 13.5 13.75 Output power vs. Input power 50 f=14.25GHz TIM1414-18L Output Power vs. Frequency 14 14.25 14.5 Frequency (GHz ≅ 4.4A DSQ Po Ids Pin(dBm) 3 14. ...
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... Power Dissipation vs. Case Temperature 100 80 60 PT( IM3 vs. Output Power Characteristics - ≅ I 4.4A DSQ f= 14.25GHz Δ f= 5MHz -30 IM3(dBc) -40 -50 - Po(dBm), Single Carrier Level TIM1414-18L 80 120 160 Tc (° 200 40 ...