BFP520FE6327XT Infineon Technologies, BFP520FE6327XT Datasheet - Page 2

• Manufacturer Part Number: BFP520FE6327XT
• Manufacturer: Infineon Technologies

Specifications of BFP520FE6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 2.5V
• Collector-base Voltage(max): 10V
• Emitter-base Voltage (max): 1V
• Collector Current (dc) (max): 40mA
• Dc Current Gain (min): 70
• Power Dissipation: 100mW
• Frequency (max): 45GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: TSFP
• Lead Free Status / RoHS Status: Compliant

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 1 V, I
= 10 V, V
= 5 V, I
B
C
E
= 0
= 0
= 0
CE
BE
thJA
= 2 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
2.5
70
-
-
-
Values
Value
110
typ.
430
3
-
-
-
max.
2007-03-30
200
3.5
170
10
35
BFP520F
Unit
V
µA
mA
µA
-
Unit
K/W