BFP520FE6327XT Infineon Technologies, BFP520FE6327XT Datasheet
BFP520FE6327XT
Specifications of BFP520FE6327XT
Related parts for BFP520FE6327XT
BFP520FE6327XT Summary of contents
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NPN Silicon RF Transistor* For highest gain low noise amplifier at 1.8 GHz and Outstanding Noise Figure F = 0.95 dB For oscillators GHz Transition frequency f ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...
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... MJS = 0.35 - XTI = All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: The TSFP-4 package has two emitter leads. To avoid high complexity fo the package equivalent circuit, both leads are combined in one electrical connection ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...