FP15R12KE3G Infineon Technologies, FP15R12KE3G Datasheet - Page 9

• Manufacturer Part Number: FP15R12KE3G
• Description: IGBT Transistors 1200V 15A PIM
• Manufacturer: Infineon Technologies

Specifications of FP15R12KE3G

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 25 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 125 C
• Package / Case: ECONO 2
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO2-1
• Ic (max): 15.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
14
12
10
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,5
Tvj = 25°C
Tvj = 125°C
1
1
1,5
FP15R12KE3G
Tj = 25°C
Tj = 125°C
1,5
2
V
V
CE
F
9(11)
[V]
[V]
2,5
2
3
2,5
I
3,5
F
= f (V
I
C
3
V
= f (V
GE
F
)
= 15 V
4
Vorläufige Daten
Preliminary data
CE
)
3,5
4,5
DB-PIM-IGBT3_1.xls
5
4