FP15R12KE3G Infineon Technologies, FP15R12KE3G Datasheet - Page 7

• Manufacturer Part Number: FP15R12KE3G
• Description: IGBT Transistors 1200V 15A PIM
• Manufacturer: Infineon Technologies

Specifications of FP15R12KE3G

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 25 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 125 C
• Package / Case: ECONO 2
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO2-1
• Ic (max): 15.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
2,5
1,5
0,5
3
2
1
0
7
6
5
4
3
2
1
0
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
20
5
Eon
Eoff
Erec
Eon
Eoff
Erec
40
10
FP15R12KE3G
R
I
C
60
G
15
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
= f (R
C
), E
80
G
20
), E
GE
off
V
= +-15 V ,
off
GE
= f (I
= ±15 V,
= f (R
C
), E
100
25
G
), E
rec
I
c
= I
= f (I
rec
nenn
R
Gon
= f (R
Vorläufige Daten
Preliminary data
C
,
)
= R
V
120
V
30
CC
CC
G
Goff
)
=
=
=
600 V
75 Ohm
600 V
DB-PIM-IGBT3_1.xls
140
35