FD300R12KE3 Infineon Technologies, FD300R12KE3 Datasheet - Page 6
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FD300R12KE3
Manufacturer Part Number
FD300R12KE3
Description
IGBT Transistors 1200V 300A CHOPPER
Manufacturer
Infineon Technologies
Datasheet
1.FD300R12KE3.pdf
(9 pages)
Specifications of FD300R12KE3
Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
300 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1470 W
Maximum Operating Temperature
+ 125 C
Package / Case
IS5a ( 62 mm )-5
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Ic (max)
300.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
62 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FD300R12KE3
Manufacturer:
MICRONAS
Quantity:
7 800
Part Number:
FD300R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FD300R12KE3
Quantity:
55
IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
Technische Information / technical information
90
80
70
60
50
40
30
20
10
180
160
140
120
100
0
80
60
40
20
0
0
0
FD300R12KE3
100
4
Eon
Eoff
Erec
Eon
Eoff
Erec
8
200
6 (8)
V
V
E
E
12
GE
GE
on
on
=±15V, R
=±15V, I
I
R
C
300
= f (I
= f (R
G
[A]
[ ]
C
G
) , E
16
C
G
) , E
=300A, V
=2,4 , V
off
400
off
= f (I
= f (R
CE
CE
20
=600V, T
=600V, T
C
) , E
G
) , E
500
rec
vj
DB_FD300R12KE3_3.0
vj
24
=125°C
=125°C
rec
= f (I
= f (R
C
)
2002-10-02
600
28
G
)