FD300R12KE3 Infineon Technologies, FD300R12KE3 Datasheet

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FD300R12KE3

Manufacturer Part Number
FD300R12KE3
Description
IGBT Transistors 1200V 300A CHOPPER
Manufacturer
Infineon Technologies
Datasheet

Specifications of FD300R12KE3

Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
300 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1470 W
Maximum Operating Temperature
+ 125 C
Package / Case
IS5a ( 62 mm )-5
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Ic (max)
300.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
62 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FD300R12KE3
Manufacturer:
MICRONAS
Quantity:
7 800
Part Number:
FD300R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FD300R12KE3
Quantity:
55
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral
I²t value
Isolations Prüfspannung
insulation test voltage
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter saturation voltage
Gate Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor Emitter Reststrom
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
prepared by: MOD-D2; Mark Münzer
approved: SM TM; Wilhelm Rusche
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Technische Information / technical information
FD300R12KE3
T
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
V
f= 1MHz, T
f= 1MHz, T
V
V
date of publication: 2002-10-02
revision: 3.0
p
p
C
C
C
vj
c
c
c
= 1ms, T
= 1ms
R
GE
CE
CE
= 300A, V
= 300A, V
= 12mA, V
= 80°C
= 25°C
= 25°C, Transistor
= 25°C
= 0V, t
= -15V...+15V
= 1200V, V
= 0V, V
p
= 10ms, T
c
= 80°C
vj
vj
GE
GE
GE
CE
= 25°C, V
= 25°C, V
1 (8)
= 20V, T
= 15V, T
= 15V, T
= V
GE
= 0V, T
GE
vj
, T
= 125°C
vj
CE
CE
vj
vj
vj
= 25°C
= 25°C
= 125°C
= 25°C
= 25V, V
= 25V, V
vj
= 25°C
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C, nom
I
I
C
C
I
I
P
GE(th)
Q
CRM
FRM
CEsat
GES
CES
I²t
ISOL
CES
I
GES
I
C
F
ies
res
tot
G
min.
5,0
-
-
-
-
-
-
-
DB_FD300R12KE3_3.0
+/- 20
1200
1470
5,80
2,80
0,85
typ.
300
480
600
300
600
2,5
1,7
2,0
19
21
-
-
2002-10-02
max.
2,15
6,50
400
5
-
-
-
-
k A²s
mA
µC
kV
nF
nF
nA
W
V
A
A
A
V
A
A
V
V
V

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FD300R12KE3 Summary of contents

Page 1

... V 1200 V CES 300 nom I 480 600 A CRM P 1470 W tot V +/- 20 V GES I 300 600 A FRM I² A²s V 2,5 kV ISOL min. typ. max. - 1,7 2, CEsat - 2 5,0 5,80 6,50 V GE(th 2,80 µ ies res CES 400 nA GES DB_FD300R12KE3_3.0 2002-10-02 ...

Page 2

... 600V -15V 125° (8) min. typ. max 0,25 - µs d,on - 0,30 - µ 0,09 - µ 0,10 - µ 0,55 - µs d,off - 0,65 - µ 0,13 - µ 0,18 - µ off I - 1200 - 0 CC´/EE´ - 1, 210 - 270 - Q µ µ rec DB_FD300R12KE3_3.0 2002-10-02 ...

Page 3

... Modul / per module = 1W/m 1W/m*K Paste grease Schraube M6 / screw M6 Anschlüsse / terminals M6 3 (8) - 1, 280 - 360 - Q µ µ rec 0,085 K 0,150 K/W thJC - - 0,125 K 0,010 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg 425 M 3 2 340 g DB_FD300R12KE3_3.0 2002-10-02 ...

Page 4

... Tvj = 25°C Tvj = 125°C 1,0 1,5 2,0 V [V] CE VGE=19V VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V 1,5 2,0 2,5 3 15V GE 2,5 3 125°C vj 3,5 4,0 4,5 5,0 DB_FD300R12KE3_3.0 2002-10-02 ...

Page 5

... Tvj=25°C Tvj=125° [V] GE Tvj = 25°C Tvj = 125°C 0,6 0,8 1,0 1,2 1,4 1 20V f 800 700 600 500 400 300 200 100 0 1,8 2,0 2,2 2,4 DB_FD300R12KE3_3.0 2002-10-02 ...

Page 6

... Switching losses (typical 100 Schaltverluste (typisch) Switching losses (typical) 180 160 140 120 100 off V =±15V Eon Eoff Erec 200 300 400 I [ off V =±15V, I =300A Eon Eoff Erec ( rec C =600V, T =125° 500 600 = rec G =600V, T =125° DB_FD300R12KE3_3.0 2002-10-02 ...

Page 7

... Zth : Diode Chopper 0,01 0 35,73 42,82 4,84 6,499E-02 2,601E-02 2,364E-03 62,99 75,66 8,52 6,499E-02 2,601E-02 2,364E-03 52,51 63,02 7,10 6,499E-02 2,601E-02 2,364E-03 V =±15V 400 600 800 1,61 1,187E-05 2,83 1,187E-05 2,37 1,187E-05 =125° 1000 1200 1400 DB_FD300R12KE3_3.0 2002-10-02 ...

Page 8

... Technische Information / technical information IGBT-Module FD300R12KE3 IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram Kriechstrecke creepage distance Luftstrecke clearance distance 8 ( DB_FD300R12KE3_3.0 2002-10-02 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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