FB10R06KL4G_B1 Infineon Technologies, FB10R06KL4G_B1 Datasheet - Page 8
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FB10R06KL4G_B1
Manufacturer Part Number
FB10R06KL4G_B1
Description
IGBT Modules N-CH 600V 15A
Manufacturer
Infineon Technologies
Datasheet
1.FB10R06KL4G_B1.pdf
(13 pages)
Specifications of FB10R06KL4G_B1
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
15 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY2
Ic (max)
10.0 A
Vce(sat) (typ)
1.95 V
Technology
IGBT2 Low Loss
Housing
EasyPIM 2
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FB10R06KL4G_B1FB10R06KL4G-B1
Manufacturer:
TONTEK
Quantity:
10 000
Company:
Part Number:
FB10R06KL4G_B1
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
FB10R06KL4G_B1
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FB10R06KL4G_B1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IGBT-Module
IGBT-Modules
Technische Information / technical information
10,000
1,000
0,100
25
20
15
10
5
0
0
0,001
Sicherer Arbeitsbereich Wechselr. (RBSOA)
reverse bias save operating area inverter (RBSOA)
Transienter Wärmewiderstand Wechselr.
transient thermal impedance inverter
100
IC,Modul
IC,Chip
Zth-IGBT
Zth-FWD
0,01
200
IGBT: r
FWD: r
FB10R06KL4GB1
i
i
i
[K/W]: 185e-3
[K/W]: 280,9e-3
i
i
[s]:
[s]:
V
300
CE
t [s]
8(12)
[V]
3e-6
3e-6
1
0,1
400
1,41
922,6e-3
79,9e-3
78,7e-3
Z
2
thJH
T
vj
= 125°C, V
= f (t)
I
C
500
= f (V
722,7e-3
1,1
10,3e-3
10,16e-3
GE
1
3
= ±15V, R
CE
)
Vorläufig
preliminary
969,7e-3
600
226,8e-3
1,51
G
225,6e-3
=
4
82 Ohm
10
700