FB10R06KL4G_B1 Infineon Technologies, FB10R06KL4G_B1 Datasheet - Page 2
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FB10R06KL4G_B1
Manufacturer Part Number
FB10R06KL4G_B1
Description
IGBT Modules N-CH 600V 15A
Manufacturer
Infineon Technologies
Datasheet
1.FB10R06KL4G_B1.pdf
(13 pages)
Specifications of FB10R06KL4G_B1
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
15 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY2
Ic (max)
10.0 A
Vce(sat) (typ)
1.95 V
Technology
IGBT2 Low Loss
Housing
EasyPIM 2
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FB10R06KL4G_B1FB10R06KL4G-B1
Manufacturer:
TONTEK
Quantity:
10 000
Company:
Part Number:
FB10R06KL4G_B1
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
FB10R06KL4G_B1
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FB10R06KL4G_B1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Modul Isolation / module isolation
Isolations-Prüfspannung
insulation test voltage
Diode Gleichrichter / diode rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter / transistor inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Technische Information / technical information
RMS, f = 50 Hz, t = 1 min.
NTC connected to baseplate
T
T
T
T
T
V
V
V
f = 1MHz, T
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
T
FB10R06KL4GB1
C
C
C
C
C
C
P
vj
vj
vj
vj
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
vj
V
= I
= I
= I
= I
= I
= I
= 150°C,
= 150°C
= 150°C
= 150°C,
= 25°C
GE
125°C,
= V
= 25 V, V
= 0V, V
10µs, V
= 15V, T
= 15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
Nenn
Nenn
Nenn
Nenn
Nenn
Nenn
= 0V,
GE
,
,
,
,
,
,
,
GE
vj
T
GE
= 25°C
GE
T
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
=20V, T
vj
= 25°C,
= 125°C,
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 125°C, R
= 125°C, R
= 25°C,
2(12)
= 0 V
=25°C, V
15V,
vj
=25°C
dI/dt =
V
V
V
V
V
V
V
R
L
L
CC
CC
CC
CC
CC
CC
CC
I
I
G
I
CE
V
G
G
G
G
G
G
G
G
G
G
C
C
C
S
S
I
=
F
R
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
= 10 A
= 800 V
10 A
10 A
0,35mA
600V
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
80 nH
300 V
82 Ohm
80 nH
82 Ohm
360 V
400 A/µs
R
V
V
V
V
AA'+CC'
GE(TO)
C
I
I
t
t
E
E
CE sat
V
CES
GES
I
d,on
d,off
ISOL
(TO)
r
I
SC
t
t
R
ies
on
off
T
r
f
F
Vorläufig
preliminary
min.
min.
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
0,67
1,95
0,36
0,44
234
230
2,5
0,9
2,2
5,5
0,8
21
11
32
30
26
28
10
30
40
5
-
-
max.
max.
2,55
400
6,5
5,0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
m
m
mA
mA
mJ
mJ
nA
kV
nF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A