FP10R12YT3 Infineon Technologies, FP10R12YT3 Datasheet - Page 8

• Manufacturer Part Number: FP10R12YT3
• Description: IGBT Modules N-CH 1.2KV 16A
• Manufacturer: Infineon Technologies

Specifications of FP10R12YT3

• Configuration: Array 7
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 16 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Packages: AG-EASY2-1
• Ic (max): 10.0 A
• Vce(sat) (typ): 1.9 V
• Technology: IGBT3 Fast
• Housing: EasyPIM™ 2
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
#
#
!SOi ' U1gW
!SOi ' U1gW
$
$
•>Hbf ' U W
•>Hbf ' U W
#
#
!SOi ' U1gW
!SOi ' U1gW
$
$
•>Hbf ' U W
•>Hbf ' U W
=
=
=
=
A32 ' 0 L9 +,- ' 5
A32 ' 0 L9 +,- ' 5
A32 ' 0 L9 +,- ' 5
A32 ' 0 L9 +,- ' 5
1,0
0,8
0,6
0,4
0,2
0,0
0,1
10
1
0,001
0
@E " =
@E " =
@E " =
@E " =
2
"
"
"
"
/
/
/
/
Kt C@v
Kt v
!SOi
•>Hbf /
4
"
"
"
"
0,01
9 (
9
@
@
@
@
6
+9 $%& '
+9 $%& '
+9 $%& '
+9 $%& '
?(
8
9(
9
1g t6v
/
/
/
/
0,1
U
U
U
U
10 12 14 16 18 20
U
U
U
U
t v
P5
()*
()*
()*
()*
@
@
@
@
9(
9
W
W
W
W
FP10R12YT3
( 5 (
W
W
W
W
1
9 (
9
?
?
10
8
#
#
#
#
!SOi ' U AW
!SOi ' U AW
!SOi ' U AW
!SOi ' U AW
1g '
1g '
1g '
1g '
/
/
/
/
1g ' U+gW
1g ' U+gW
1g ' U+gW
1g ' U+gW
=
=
=
=
=
=
=
=
1,0
0,8
0,6
0,4
0,2
0,0
20
18
16
14
12
10
8
6
4
2
0
69 +,- ' 5
69 +,- ' 5
69 +,- ' 5
69 +,- ' 5
0,0
50
\
\
\
\
100
/
/
/
/
0,2
!SOi
$%& ' ()*
$%& ' ( )*
150
+9 $%& '
+9 $%& '
+9 $%& '
+9 $%& '
@
@
@
@
/
/
/
/
0,4
Vorläufige Daten
preliminary data
200
<
<
<
<
+g t+v
0,6
U
U
U
U
A tLv
()*
()*
()*
()*
U
U
U
U
250
W
W
W
W
U
U
U
U
0,8
W
W
W
W
300
U
U
U
U
W
W
W
W
1,0
350
W
W
W
W
400
1,2