FP10R12YT3 Infineon Technologies, FP10R12YT3 Datasheet - Page 5

• Manufacturer Part Number: FP10R12YT3
• Description: IGBT Modules N-CH 1.2KV 16A
• Manufacturer: Infineon Technologies

Specifications of FP10R12YT3

• Configuration: Array 7
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 16 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Packages: AG-EASY2-1
• Ic (max): 10.0 A
• Vce(sat) (typ): 1.9 V
• Technology: IGBT3 Fast
• Housing: EasyPIM™ 2
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
1
M
"
V
+
M
M
6
"
NT
" D " " `
$ "
V
6
"
< =
=
"
"
"
\
R
7 E
"
R
"
7
R
" #
R "
*
=
E
"
#
1
=
"
"
a
9
9
=
D
Q
"
$, ' ()*9
M#9 ' ( N79 '
FP10R12YT3
R
R
T
T
#
C
C
C
C
"
"
"
C
5
"
"
=
"
"
Vorläufige Daten
preliminary data
$%& 4G^
$%& 3j
+w.lx
~~|},,|
,,|}--|
VF,-
*$1
$F>e
<
Q
"
6 nyz
{
P9
P (
P (
9(
5
9(
9
9
(
" D
0
(
(
(
""
""
"L
)*
)*
)*
m
+
N