FF150R12ME3G Infineon Technologies, FF150R12ME3G Datasheet - Page 8

• Manufacturer Part Number: FF150R12ME3G
• Description: IGBT Modules N-CH 1.2KV 200A
• Manufacturer: Infineon Technologies

Specifications of FF150R12ME3G

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 200A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 695 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoDUAL-3
• Ic (max): 150.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoDUAL™ 3
• Lead Free Status / RoHS Status: Compliant

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