FF150R12ME3G Infineon Technologies, FF150R12ME3G Datasheet

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FF150R12ME3G

Manufacturer Part Number

FF150R12ME3G

Description

IGBT Modules N-CH 1.2KV 200A

Manufacturer

Infineon Technologies

Datasheet

1.FF150R12ME3G.pdf (8 pages)

Specifications of FF150R12ME3G

Configuration

Dual

Channel Type

N

Collector-emitter Voltage

1.2kV

Collector Current (dc) (max)

200A

Gate To Emitter Voltage (max)

±20V

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

1.7 V

Continuous Collector Current At 25 C

200 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

695 W

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

EconoDUAL-3

Ic (max)

150.0 A

Vce(sat) (typ)

1.7 V

Technology

IGBT3

Housing

EconoDUAL 3

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

FF150R12ME3G

Manufacturer:

EUPEC/Infineon

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

FF150R12ME3G

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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