FP50R12KS4C Infineon Technologies, FP50R12KS4C Datasheet - Page 8

• Manufacturer Part Number: FP50R12KS4C
• Description: IGBT Transistors 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KS4C

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Package / Case: EconoPIM3-24
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
120
100
1
0,001
80
60
40
20
0
0
Sicherer Arbeitsbereich Wechselr. (RBSOA)
Reverse bias save operating area Inverter (RBSOA)
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
200
0,01
400
Zth-IGBT
Zth-FWD
FP50R12KS4C
IC,Modul
IC,Chip
V
t [s]
600
CE
8/11
[V]
0,1
800
Z
thJC
T
vj
= 125°C, V
= f (t)
I
C
1000
= f (V
1
GE
CE
= ±15V, R
)
1200
G
=
DB-PIM-S_IGBT_V2.xls
15Ohm
1400
10
2001-11-28