DDB6U75N16YR Infineon Technologies, DDB6U75N16YR Datasheet - Page 6

• Manufacturer Part Number: DDB6U75N16YR
• Description: IGBT Modules N-CH 1.2KV 69A
• Manufacturer: Infineon Technologies

Specifications of DDB6U75N16YR

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 69 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Packages: AG-EASY2-1
• Vdrm/ Vrrm (v): 1,600.0 V
• Ifsm (max): 605.0 A
• Housing: EasyBRIDGE™ 2
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
%
%
64 ) R,4XT
64 ) R,4XT
,\X ) e
,\X ) e
m&+ & 0
m&+ & 0
m&+
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%
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64 ) R,4XT
64 ) R,4XT
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m&+ & 0
m&+
m&+
100000
10000
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) R&T
) R&T
) R&T
1000
110
100
100
90
80
70
60
50
40
30
20
10
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0
0
0
0
0
0
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,= \Zgg ) 5 D= &'( )
20
200
#
#
#
#
64= 2
64= +
H•<
40
9
9
9
9
400
60
R
R
R
R
600
,
&4 t*+v
80
R
R
R
R
61k& k+ R k%y9T
61k& k+ R k%y9T
DDB6U75N16YR
61k& k+ R k%y9T
61k& k+ R k%y9T
t,v
800
T
T
T
T
61k& k+ R k%y9T
61k& k+ R k%y9T
61k& k+ R k%y9T
61k& k+ R k%y9T
*+
*+
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100 120 140 160
T
T
T
T
1000 1200 1400
6
67 ) R,7T
67 ) R,7T
67 ) R,7T
67 ) R,7T
$
$
$
$
50
45
40
35
30
25
20
15
10
5
0
0,0
#
#
#
#
0,3
&'( )
&'( )
0,7
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1,0
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k 0 +
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1,3
Vorläufige Daten
preliminary data
#
#
#
#
1,6
2,0
R
R
R
R
R
R
R
R
2,3
T
T
T
T
T
T
T
T
2,6