DDB6U75N16YR Infineon Technologies, DDB6U75N16YR Datasheet - Page 4

• Manufacturer Part Number: DDB6U75N16YR
• Description: IGBT Modules N-CH 1.2KV 69A
• Manufacturer: Infineon Technologies

Specifications of DDB6U75N16YR

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 69 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Packages: AG-EASY2-1
• Vdrm/ Vrrm (v): 1,600.0 V
• Ifsm (max): 605.0 A
• Housing: EasyBRIDGE™ 2
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
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