BCR400WH6327XT Infineon Technologies, BCR400WH6327XT Datasheet - Page 5

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BCR400WH6327XT

Manufacturer Part Number
BCR400WH6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR400WH6327XT

Lead Free Status / RoHS Status
Supplier Unconfirmed
Total power dissipation P
mW
400
300
250
200
150
100
50
0
0
20
40
60
RF IN
100 k
100
80
Typical application for GaAs FET
with active bias controller
k
tot
100
-
V
= f (T
G
120 °C
S
)
T
1 nF
S
BCR
1
2
150
400
5
4
3
+
V
Note that up to T S =115°C
it is not possible to exceed P tot
respecting the maximum
ratings of V S and I Contr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
S
R
ext
100 pF
EHA07190
RF OUT
BCR400W
2007-05-29

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