BCR400WH6327XT Infineon Technologies, BCR400WH6327XT Datasheet

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BCR400WH6327XT

Manufacturer Part Number
BCR400WH6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR400WH6327XT

Lead Free Status / RoHS Status
Supplier Unconfirmed
BCR400W
1 Pb-containing package may be available upon special request
2 For calculation of R
Junction - soldering point
Maximum Ratings
Parameter
Source voltage
Control current
Control voltage
Reverse voltage between all terminals
Total power dissipation, T
Junction temperature
Storage temperature
Active Bias Controller
Characteristics
Application notes
Type
Thermal Resistance
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Supplies stable bias current even at low battery
Low voltage drop of 0.7V
Stabilizing bias current of NPN transistors
Ideal supplement for Sieget and other transistors
also usable as current source up to 5mA
voltage and extreme ambient temperature variation
and FET's from less than 0.2mA up to
more than 200mA
W4s
Marking
thJA
please refer to Application Note Thermal Resistance
1=GND/E
2)
S
= 117 °C
(E
NPN
NPN
, B
1)
NPN
2=Contr/B
, C
Pin Configuration
NPN
1
are electrodes of a stabilized NPN transistor)
NPN
Symbol
V
I
V
V
P
T
T
R
Contr.
j
stg
S
Contr.
R
tot
thJS
3V
S
4=Rext/C
4
-65 ... 150
3
Value
330
150
0.5
18
10
16
100
4
1
NPN
BCR400W
2007-05-29
SOT343
Package
2
1
EHA07188
3
2
Unit
V
mA
V
mW
°C
K/W

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BCR400WH6327XT Summary of contents

Page 1

Active Bias Controller Characteristics Supplies stable bias current even at low battery voltage and extreme ambient temperature variation Low voltage drop of 0.7V Application notes Stabilizing bias current of NPN transistors and FET's from less than 0.2mA up to more ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Additional current consumption Lowest stabilizing current Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage I (NPN) < 0.5mA B Voltage drop (V ...

Page 3

Collector current and h refer to stabilized NPN Transistor C FE Parameter ext 100 150 200 Voltage drop ...

Page 4

Collector current stabilized NPN Transistor Parameter ext -40 - Control current ...

Page 5

Total power dissipation P 400 mW 300 250 200 150 100 Typical application for GaAs FET with active bias controller RF IN 100 k 100 = tot S Note that ...

Page 6

RF transistor controlled by BCR400 + V BCR 400 contr RX/TX antenna switch, compatible to control logic and working at wide battery voltage range ext. drop ...

Page 7

Low voltage reference Red LED V REF Precision timer with BCR400 providing constant charge current BCR 400 ext 4 1 BCR 400 EHA07219 ...

Page 8

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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