5962-87664012A QP SEMICONDUCTOR, 5962-87664012A Datasheet - Page 16

• Manufacturer Part Number: 5962-87664012A
• Manufacturer: QP SEMICONDUCTOR

Specifications of 5962-87664012A

• Lead Free Status / RoHS Status: Supplier Unconfirmed

DSCC FORM 2234
APR 97
(see 3.5 herein).
method 1019, condition A, and as specified herein. Prior to and during total dose irradiation characterization and testing, the
devices for characterization shall be biased so that 50 percent are at inputs high and 50 percent are at inputs low, and the
devices for testing shall be biased to the worst case condition established during characterization. Devices shall be biased as
follows:
requiring a RHA level greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in
table I herein and shall be the pre-irradiation end-point electrical parameter limit at +25°C ±5°C. Testing shall be performed at
initial qualification and after any design or process changes which may affect the RHA response of the device.
Q and V or MIL-PRF-38535, appendix A for device class M.
(original equipment), design applications, and logistics purposes.
prepared specification or drawing.
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone [phone].
Currents given are conventional current and positive when flowing into the referenced terminal.
Device type 01:
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883,
4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on classes M, Q, and V devices
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
a.
b.
a. Inputs tested high, V
b. Inputs tested low, V
End-point electrical parameters shall be as specified in table II herein.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
T
DEFENSE SUPPLY CENTER COLUMBUS
open.
A
= +25°C ±5°C, after exposure, to the subgroups specified in table II herein.
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
CC
CC
= 5.5 V dc ±5%, R
= 5.5 V dc ±5%, R
CC
CC
= 10Ω ±20%, V
= 10Ω ±20%, V
IN
IN
= 0.0 V dc, R
SIZE
= 5.0 V dc +5%, R
A
REVISION LEVEL
IN
= 1 kΩ ±20%, and all outputs are open.
IN
= 1 kΩ ±20%, and all outputs are
C
SHEET
5962-87664
16