5962-9206203MXA QP SEMICONDUCTOR, 5962-9206203MXA Datasheet - Page 19

• Manufacturer Part Number: 5962-9206203MXA
• Manufacturer: QP SEMICONDUCTOR

Specifications of 5962-9206203MXA

• Lead Free Status / RoHS Status: Supplier Unconfirmed

DSCC FORM 2234
APR 97
made available upon request.
light which has a wavelength of 2537 angstroms (Å). The integrated dose (i.e., ultraviolet intensity x exposure time) for erasure
should be a minimum of fifteen (15) Ws/cm
ultraviolet lamp with a 1200 µW/cm
erasure. The maximum integrated dose the device can be exposed to without damage is 7258 Ws/cm
µW/cm
recorded before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,
either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7, and
9.
Q and V or MIL-PRF-38535, appendix A for device class M.
(original equipment), design applications, and logistics purposes.
prepared specification or drawing.
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone [phone].
[phone].
MIL-PRF-38535, MIL-STD-1331, and as follows:
4.5 Programming procedure. The programming procedures shall be as specified by the device manufacturer and shall be
4.6 Erasing procedures. The recommended erasure procedure is exposure to shortwave ultraviolet
4.7 Delta measurements for device classes Q and V. Delta measurements, as specified in table IIA, shall be made and
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone
6.5 Symbols, definitions, and definitions. The abbreviations, symbols, and definitions used herein are defined in
C IN ......................................... Input terminal capacitance.
C OUT ..................................... Output terminal capacitance.
GND....................................... Ground zero voltage potential.
I CC ......................................... Supply current.
I IX .......................................... Input current.
I OZ ......................................... Output current.
T C .......................................... Case temperature.
V CC ....................................... Positive supply voltage.
2
). Exposure of the device to high intensity ultraviolet light for long periods may cause permanent damage.
DEFENSE SUPPLY CENTER COLUMBUS
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
2
power rating. The device should be placed within one inch of the lamp tubes during
2
. The erasure time with this dosage is approximately 15 to 20 minutes using an
SIZE
A
REVISION LEVEL
B
2
(1 week at 12,000
SHEET
5962-92062
19