MC9S08GB60ACFUE Freescale, MC9S08GB60ACFUE Datasheet - Page 263

• Manufacturer Part Number: MC9S08GB60ACFUE
• Manufacturer: Freescale

Specifications of MC9S08GB60ACFUE

• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 40MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 4KB
• # I/os (max): 56
• Number Of Timers - General Purpose: 8
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8/2.08V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 64
• Package Type: LQFP
• Program Memory Type: Flash
• Program Memory Size: 60KB
• Lead Free Status / RoHS Status: Compliant

A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) This device
was qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses,
the device no longer meets the device specification requirements. Complete dc parametric and functional
testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to
V
Low-voltage detection threshold — high range
Low-voltage detection threshold — low range
Low-voltage warning threshold — high range
DD
MM circuit description
HBM circuit description
0 < f
0 < f
Bus
Bus
< 8 MHz
< 20 MHz
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Parameter
Parameter
(Temperature Range = –40 to 85°C Ambient)
Table A-4. DC Characteristics (Sheet 1 of 3)
Table A-3. ESD Protection Characteristics
(V
(V
(V
(V
(V
(V
DD
DD
DD
DD
DD
DD
falling)
rising)
falling)
rising)
falling)
rising)
MC9S08GB60A Data Sheet, Rev. 2
Symbol
Symbol
V
V
V
V
V
V
THHBM
THMM
V
LVWH
LVDH
LVDL
RAM
DD
2.08
2.08
2.16
1.80
1.88
2.35
2.35
1.0
Min
1.8
2
Typical
Value
2000
2.19
1.82
1.90
2.40
2.40
200
2.1
Appendix A Electrical Characteristics
1
Max
2.27
1.91
1.99
3.6
3.6
2.2
2.5
2.5
—
Unit
Unit
V
V
V
V
V
V
V
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