CY8C5487LTI-007 Cypress Semiconductor Corp, CY8C5487LTI-007 Datasheet - Page 81

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CY8C5487LTI-007

Manufacturer Part Number
CY8C5487LTI-007
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY8C5487LTI-007

Lead Free Status / RoHS Status
Compliant
Table 11-61. NVL AC Specifications
11.7.4 SRAM
Table 11-62. SRAM DC Specifications
Table 11-63. SRAM AC Specifications
11.7.5 External Memory Interface
Table 11-64. Asynchronous Read Cycle Specifications
Document Number: 001-55036 Rev. *F
Vsram
Fsram
Tcel
Taddrv
Taddrh
Toev
Parameter
Parameter
Parameter
Parameter
T
EM_Addr
EM_WEn
EM_Data
EM_OEn
EM_CEn
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
EMIF Clock period
EM_CEn low time
EM_CEn low to EM_Addr valid
Address hold time after EM_OEn high
EM_CEn low to EM_OEn low
Description
Description
Description
Description
Toev
Taddrv
Figure 11-2. Asynchronous Read Cycle Timing
PRELIMINARY
Programmed at 25°C
Programmed at 0 to 70°C
Programmed at 25°C
Programmed at 0 to 70°C
Tcel
Toel
Address
Tdoesu
Tdcesu
Conditions
Conditions
Conditions
Conditions
Data
PSoC
®
2*T-1
30.3
Min
100
Min
Min
Min
1.2
DC
1K
20
20
5: CY8C54 Family Data
-5
2
-
Toeh
Tdoeh
Tdceh
Taddrh
Typ
Typ
Typ
Typ
-
-
-
-
-
-
-
-
-
-
-
2*T+2
Max
Max
Max
Max
80
5
5
-
-
-
-
-
-
-
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program/
program/
cycles
cycles
Units
erase
erase
years
years
Units
Units
Units
MHz
ns
ns
ns
ns
ns
V
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