5962-8948403M3A QP SEMICONDUCTOR, 5962-8948403M3A Datasheet - Page 16

• Manufacturer Part Number: 5962-8948403M3A
• Manufacturer: QP SEMICONDUCTOR

Specifications of 5962-8948403M3A

• Lead Free Status / RoHS Status: Supplier Unconfirmed

DSCC FORM 2234
APR 97
After completion of all testing, the devices shall be erased and verified.
(see 3.5 herein).
has a wavelength of 2537 Angstroms (Å). The integrated dose (i.e., UV intensity x exposure time) for erasure should be a
minimum of 15 Ws/cm 2 . The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with a
12000 µW/cm 2 power rating. The device should be placed within 1 inch of the lamp tubes during erasure. The maximum
integrated dose the device can be exposed to without damage is 7258 Ws/cm 2 (1 week at
12000 µW/cm 2 ). Exposure of EPROMS to high intensity UV light for long periods may cause permanent damage.
made available upon request.
recorded before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,
either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7,
and 9.
Q and V or MIL-PRF-38535, appendix A for device class M.
(original equipment), design applications, and logistics purposes.
prepared specification or drawing.
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone [phone].
[phone].
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
4.5 Erasing procedure. The recommended erasure procedure for the device is exposure to shortwave ultraviolet light which
4.6 Programming procedure. The programming procedures shall be as specified by the device manufacturer and shall be
4.7 Delta measurements for device classes Q and V. Delta measurements, as specified in table IIA, shall be made and
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone
a.
b.
End-point electrical parameters shall be as specified in table IIA herein.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
T
DEFENSE SUPPLY CENTER COLUMBUS
A
= +25°C ± 5°C, after exposure, to the subgroups specified in table IIA herein.
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
SIZE
A
REVISION LEVEL
A
SHEET
5962-89484
16