M395T5750EZ4CE65 Samsung Semiconductor, M395T5750EZ4CE65 Datasheet - Page 4

• Manufacturer Part Number: M395T5750EZ4CE65
• Manufacturer: Samsung Semiconductor

Specifications of M395T5750EZ4CE65

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 512Mb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 2 : Performance range
Table 3 : Address Configuration
1. FEATURES
Table 1 : Ordering Information
Note :
1. “Z” of Part number(11th digit) stands for Lead-free products.
2. The last digit stands for AMB.
FBDIMM
DDR2 DRAM Speed
CL-tRCD-tRP
M395T6553EZ4-CD55/E65
M395T6553EZ4-CD56/E66/F76/E76
M395T6553EZ4-CD51/E61
M395T6553EZ4-CD57/E67
M395T2953EZ4-CD55/E65
M395T2953EZ4-CD56/E66/F76/E76
M395T2953EZ4-CD51/E61
M395T2953EZ4-CD57/E67
M395T5750EZ4-CD55/E65
M395T5750EZ4-CD56/E66/F76/E76
M395T5750EZ4-CD51/E61
M395T5750EZ4-CD57/E67
128Mx4(512Mb) based Module
64Mx8(512Mb) based Module
- 240pin fully buffered dual in-line memory module (FB-
- 3.2Gb/s, 4.0Gb/s, 4.8Gb/s link transfer rate
- 1.8V +/- 0.1V Power Supply for DRAM V
- 1.5V +0.075/-0.045V Power Supply for AMB V
- 3.3V +/- 0.3V Power Supply for V
- Buffer Interface with high-speed differential point-to-
- Channel error detection & reporting
DIMM)
point Link at 1.5 volt
Part Number
Organization
E7(DDR2-800)
5-5-5
800
Density
512MB
1GB
2GB
DDSPD
Row Address
A0-A13
A0-A13
Organization
128M x 72
256M x 72
DD
64M x 72
F7(DDR2-800)
/V
DDQ
6-6-6
CC
800
Component Composition
4 of 33
128Mx4(K4T51043QE)
64Mx8(K4T51083QE)
64Mx8(K4T51083QE)
Column Address
A0-A9, A11
A0-A9
* 18EA
* 36EA
* 9EA
E6(DDR2-667)
- Channel fail over mode support
- Serial presence detect with EEPROM
- 4 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5, 6
- Automatic DDR2 DRAM bus and channel calibration
- MBIST and IBIST Test functions
- Hot add-on and Hot Remove Capability
- Transparent mode for DRAM test support
5-5-5
667
Number of
Bank Address
Rank
BA0-BA1
BA0-BA1
1
2
2
D5(DDR2-533)
IDT A1.5
IDT A1.5
IDT A1.5
Rev. 1.51 January 2008
NEC D1
NEC D1
NEC D1
4-4-4
Intel D1
Intel D1
Intel D1
IDT C1
IDT C1
IDT C1
533
AMB
DDR2 SDRAM
Type of Heat
Full Module
Spreader
Auto Precharge
A10
A10
Mbps
Unit
CK
30.35mm
Height