M395T5750EZ4CE65 Samsung Semiconductor, M395T5750EZ4CE65 Datasheet - Page 19

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M395T5750EZ4CE65

Manufacturer Part Number
M395T5750EZ4CE65
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of M395T5750EZ4CE65

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240FBDIMM
Device Core Size
72b
Organization
256Mx72
Total Density
2GByte
Chip Density
512Mb
Package Type
FBDIMM
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Number Of Elements
36
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
6.0 ELECTRICAL CHARACTERISTICS
Table 6 : AbsoIute Maximum Ratings
Note : 1. Stresses greater than those Iisted may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other
Table 7 : Input DC Operating Conditions
Note : 1. Applies for SMB and SPD bus signals.
Table 8 : Timing Parameters
Note : 1. Defined in FB-DIMM Architecture and Protocol Spec
FBDIMM
Voltage on any pin relative to V
Voltage on V
Voltage V
Voltage on V
Storage temperature
DDR2 SDRAM device operating temperature(Ambient)
AMB device operating temperature (Ambient)
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD Input HIGH (Iogic 1) voltage
SPD Input LOW (logic 0) voltage
RESET Input HIGH (logic 1) voltage
RESET Input LOW (logic 0) voltage
Leakage Current (RESET)
Leakage Current (link)
EI Assertion Pass-Thru Timing
EI Deassertion Pass-Thru Timing
EI Assertion Duration
FBD Cmd to DDR Clk out that latches Cmd
FBD Cmd to DDR Write
DDR Read to FBD (last DIMM)
Resample Pass-Thru time
ResynchPass-Thru time
Bit Lock Interval
Frame Lock Interval
2. DDR2 SDRAMs of FBDIMM should require this specification.
2. Applies for AMB CMOS signal RESET.
3. For all other AMB related DC parameters, please refer to the high-speed differential link interface specification.
2. Clocks defined as core clocks = 2x SCK input
3. @ DDR2-667 - measured from beginning of frame at southbound input to DDR clock output that latches the first command of a frame to the DRAMs
4. @ DDR2-667 - measured from latest DQS input AMB TO start of matching data frame at northbound FB-DIMM outputs.
conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
Average periodic refresh interval
DD
CC
TT
pin relative to V
pin relative to V
pin relative to V
Parameter
Parameter
Parameter
SS
SS
SS
SS
Parameter
tREFI
tEI Propagatet
tEI
tBitLock
tFrameLock
tEID
Symbol
Symbol
85 °C < T
0 °C ≤ T
Symbol
V
V
V
V
V
IH
IH
DDSPD
IL
IL
V
V
V
(DC)
(DC)
I
(DC)
(DC)
I
CC
DD
TT
19 of 33
L
L
CASE
CASE
MIN
100
≤ 85°C
≤ 95°C
0.48 x V
1.455
MIN
1.7
3.0
2.1
-90
-5
V
1.075
2.075
Symbol
Typ.
IN
TBD
T
T
8.1
5.0
DD
T
V
V
V
CASE
CASE
, V
STG
CC
DD
TT
OUT
DRAM
0.50 x V
7.8
3.9
Nom
1.50
1.8
3.3
Bitlock
Max.
154
119
DD
4
MIN
-0.3
-0.3
-0.5
-0.5
-55
85
0
0
Rev. 1.51 January 2008
0.52 x V
Units
V
µs
µs
1.575
MAX
MAX
DDSPD
1.75
1.75
100
110
DDR2 SDRAM
2.3
2.3
1.9
3.6
0.8
0.5
85
95
90
5
frames
frames
Units
clks
clks
clks
ns
ns
ns
ns
ns
DD
Units
°C
°C
°C
V
V
V
V
Units
uA
uA
V
V
V
V
V
V
V
V
Notes
1,2
2
3
4
1
1
Note
-
Notes
1,2
1,2
1
1
1
1
1
1
1
2
1
2
3

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