SAA4956TJ NXP Semiconductors, SAA4956TJ Datasheet - Page 7
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SAA4956TJ
Manufacturer Part Number
SAA4956TJ
Description
Manufacturer
NXP Semiconductors
Datasheet
1.SAA4956TJ.pdf
(36 pages)
Specifications of SAA4956TJ
Operating Temperature (max)
70C
Operating Temperature (min)
0C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SAA4956TJ/V1
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
7
The functional description is divided into 3 main sections:
7.1
The basic field memory function is fully compatible with the
SAA4955TJ if the NREN signal is LOW. In this case the
noise reduction function is bypassed via a data mux. If the
NREN signal is HIGH the basic field memory function can
only be executed with a write frequency restricted to half of
1998 Dec 08
handbook, halfpage
The basic field memory function (see Section 7.1)
The optional noise reduction function (used in case the
NREN signal is HIGH; see Section 7.2)
The I
reduction circuit; see Section 7.3).
2.9-Mbit field memory with noise reduction
FUNCTIONAL DESCRIPTION
Field memory function
2
C-bus interface function (which controls the noise
D11 (Y7)
D10 (Y6)
D3 (U1)
D2 (U0)
D9 (Y5)
D8 (Y4)
D7 (Y3)
D6 (Y2)
D5 (Y1)
D4 (Y0)
D1 (V1)
D0 (V0)
SWCK
RSTW
GND
V DD
SDA
SCL
WE
IE
Fig.2 Pin configuration.
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
SAA4956TJ
MGR688
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
NREN
OGND
Q11 (Y7)
Q10 (Y6)
Q9 (Y5)
Q8 (Y4)
Q7 (Y3)
Q6 (Y2)
Q5 (Y1)
Q4 (Y0)
Q3 (U1)
Q2 (U0)
Q1 (V1)
Q0 (V0)
SRCK
RSTR
RE
OE
V DD(O)
V DD(P)
7
the read operation frequency. In this case the random
block access modes are not supported because a second
read operation (READ2) is activated with an identical
frequency as used in the write operations. The PAN-IC
(SAA4995WP) needs approximately the same write
frequency for the noise reduction option as the read
frequency (32 MHz). To allow this configuration the
self-refresh must be switched off via the I
7.1.1
Write operations are controlled by the SWCK, RSTW, WE
and IE signals. A write operation starts with a reset write
address pointer (RSTW) operation, followed by a complete
cycle of the SWCK clock during which time WE and IE
must be held HIGH. Write operations between two
successive reset write operations must contain at least
40 SWCK write clock cycles while WE is HIGH. To transfer
data temporarily stored in the serial write registers to the
memory array, a reset write operation is required after the
last write operation.
7.1.1.1
The first positive transition of SWCK after RSTW goes
from LOW-to-HIGH resets the write address pointer to the
lowest address ( 12 decimal), regardless of the state of
WE (see Figs 4 and 5). RSTW set-up (t
(t
(see Fig.4). The reset write operation may also be
asynchronously related to the SWCK signal if WE is LOW.
RSTW needs to stay LOW for a single SWCK cycle before
another reset write operation can take place. If RSTW is
HIGH for 1024 SWCK write clock cycles while WE is
HIGH, the SAA4956TJ will enter a built-in test mode.
7.1.1.2
The SAA4956TJ will enter random write block access
mode if the following signal sequence is applied to control
inputs IE and WE during the first four SWCK write clock
cycles after a reset write (see Figs 6 and 7):
1. At the 1st and 2nd positive transitions of SWCK,
2. At the 3rd and 4th positive transitions of SWCK,
3. At the 5th positive transition of SWCK, the state of WE
h(RSTW)
IE must be LOW and WE must be HIGH
IE must be HIGH and WE must be LOW
determines which input pin is used for the block
address. If WE is LOW the Most Significant Bit (MSB)
of the block address must be applied to the D0 input
pin. If WE is HIGH, the MSB of the block address is
applied to pin IE.
) times are referenced to the rising edge of SWCK
W
Reset write: RSTW
Random write block access mode
RITE OPERATION
Preliminary specification
SAA4956TJ
su(RSTW)
2
C-bus interface.
) and hold