M29W128GH70N6F NUMONYX, M29W128GH70N6F Datasheet - Page 89

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M29W128GH70N6F

Manufacturer Part Number
M29W128GH70N6F
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M29W128GH70N6F

Cell Type
NOR
Density
128Mb
Access Time (max)
70ns
Interface Type
Parallel
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Compliant

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M29W128GH, M29W128GL
Extended memory block
C.2
Customer lockable extended memory block
A device where the extended memory block is customer lockable is delivered with the DQ7
bit set to ‘0’ and the extended memory block unprotected. It is up to the customer to
program and protect the extended memory block but care must be taken because the
protection of the extended memory block is not reversible.
If the device has not been shipped with the extended memory block factory protected, the
block can be protected by setting the extended memory block protection bit, DQ0, to ‘0’.
However, this bit is one-time programmable and once protected the extended memory block
cannot be unprotected.
Once the extended memory block is programmed, the Exit Extended Memory Block
command must be issued to exit the extended memory block mode and return the device to
read mode.
Table 42.
Extended memory block address and data
(1)
Address
Data
x8
x16
Factory locked
Customer lockable
000000h-0000FFh
000000h-00007Fh
Security identification number
Determined by customer
1. See
Table 35: Block
addresses.
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