M29W128GH70N6F NUMONYX, M29W128GH70N6F Datasheet - Page 34

no-image

M29W128GH70N6F

Manufacturer Part Number
M29W128GH70N6F
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M29W128GH70N6F

Cell Type
NOR
Density
128Mb
Access Time (max)
70ns
Interface Type
Parallel
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W128GH70N6F
Manufacturer:
ST
Quantity:
8 790
Part Number:
M29W128GH70N6F
Manufacturer:
SAMSUNG
Quantity:
6 389
Part Number:
M29W128GH70N6F
Manufacturer:
ST
0
Part Number:
M29W128GH70N6F
Manufacturer:
MICRON/美光
Quantity:
20 000
6.2
6.2.1
34/94
Fast program commands
The M29W128GH/L offers a set of fast program commands to improve the programming
throughput:
See either
for a summary of the fast program commands.
When V
bypass mode (see
After programming has started, bus read operations in the memory output the status register
content. Write to Buffer Program command can be suspended and then resumed by issuing
a Program Suspend command and a Program Resume command, respectively (see
Section 6.1.8: Program Suspend command
command).
After the fast program operation has completed, the memory will return to read mode,
unless an error has occurred. When an error occurs bus read operations to the memory will
continue to output the status register. A Read/Reset command must be issued to reset the
error condition and return to read mode. One of the erase commands must be used to set all
the bits in a block or in the whole memory from ’0’ to ’1’.
Typical program times are given in
endurance
Write to Buffer Program command
The Write to Buffer Program command makes use of the device’s 32-word/64-byte write
buffer to speed up programming. 32 words/64 bytes can be loaded into the write buffer.
Each write buffer has the same A22-A5 addresses.The Write to Buffer Program command
dramatically reduces system programming time compared to the standard non-buffered
Program command.
When issuing a Write to Buffer Program command, the V
V
See
Five successive steps are required to issue the Write to Buffer Program command:
1.
2.
3.
4.
5.
IH
, or raised to V
Table 17
Write to Buffer Program
Enhanced Buffered Program (valid in x 16 mode only)
Unlock Bypass.
The Write to Buffer Program command starts with two unlock cycles
The third bus write cycle sets up the Write to Buffer Program command. The setup
code can be addressed to any location within the targeted block
The fourth bus write cycle sets up the number of words/bytes to be programmed. Value
N is written to the same block address, where N+1 is the number of words/bytes to be
programmed. N+1 must not exceed the size of the write buffer or the operation will
abort
The fifth cycle loads the first address and data to be programmed
Use N bus write cycles to load the address and data for each word/byte into the write
buffer. Addresses must lie within the range from the start address+1 to the start
address + N-1.
PPH
Table
cycles.
is applied to the V
for details on typical write to buffer program times in both cases.
12,
PPH
Section 6.2.6: Unlock Bypass
Table 13
.
or
PP
Table 14
/write protect pin the memory automatically enters unlock
Table 17: Program, erase times and program, erase
depending on the configuration that is being used,
and
Section 6.1.9: Program Resume
command).
PP
/WP pin can be either held High,

Related parts for M29W128GH70N6F