M25PE80-VMN6P NUMONYX, M25PE80-VMN6P Datasheet - Page 18

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M25PE80-VMN6P

Manufacturer Part Number
M25PE80-VMN6P
Description
Flash Mem Serial-SPI 3.3V 8M-Bit 1M x 8 8ns 8-Pin SOIC N Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M25PE80-VMN6P

Package
8SOIC N
Cell Type
NOR
Density
8 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
256Byte x 4096
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Compliant
Memory organization
5
18/66
Memory organization
The memory is organized as:
Each page can be individually:
The device is page, sector or bulk erasable (bits are erased from 0 to 1).
Table 5.
Sector Subsector
15
14
13
12
11
10
9
1
4096 pages (256 bytes each).
1,048,576 bytes (8 bits each)
16 sectors (512 Kbits, 65536 bytes each)
256 subsectors (32 Kbits, 4096 bytes each)
programmed (bits are programmed from 1 to 0)
erased (bits are erased from 0 to 1)
written (bits are changed to either 0 or 1)
255
240
239
224
223
208
207
192
191
176
175
160
159
144
Memory organization
31
16
FF000h
EF000h
E0000h
DF000h
D0000h
CF000h
C0000h
BF000h
B0000h
AF000h
A0000h
F0000h
9F000h
90000h
1F000h
10000h
Address range
EFFFFh
DFFFFh
D0FFFh
CFFFFh
C0FFFh
BFFFFh
AFFFFh
FFFFFh
F0FFFh
E0FFFh
B0FFFh
A0FFFh
9FFFFh
1FFFFh
90FFFh
10FFFh
Sector Subsector
8
7
6
5
4
3
2
0
143
128
127
112
111
96
95
80
79
64
63
48
47
32
15
4
3
2
1
0
8F000h
80000h
7F000h
70000h
6F000h
60000h
5F000h
50000h
4F000h
40000h
3F000h
30000h
2F000h
20000h
0F000h
04000h
03000h
02000h
01000h
00000h
Address range
M25PE80
8FFFFh
7FFFFh
6FFFFh
5FFFFh
4FFFFh
3FFFFh
2FFFFh
0FFFFh
80FFFh
70FFFh
60FFFh
50FFFh
40FFFh
30FFFh
20FFFh
04FFFh
03FFFh
02FFFh
01FFFh
00FFFh

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