S29JL032H90TAI210 Spansion Inc., S29JL032H90TAI210 Datasheet - Page 3

• Manufacturer Part Number: S29JL032H90TAI210
• Manufacturer: Spansion Inc.

Specifications of S29JL032H90TAI210

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 22/21Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3/8.5 to 9.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 4M/2M
• Supply Current: 16mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Not Compliant

Distinctive Characteristics
General Description
Architectural Advantages
Package options
Performance Characteristics
S29JL032H
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory
Data Sheet
Simultaneous Read/Write Operations
– Data can be continuously read from one bank while executing
– Zero latency between read and write operations
Multiple Bank Architecture
– Four bank architectures available (refer to
Boot Sectors
– Top and bottom boot sectors in the same device
– Any combination of sectors can be erased
Manufactured on 0.13 µm Process Technology
Secured Silicon Sector: Extra 256 Byte sector
– Customer lockable: One-time programmable only. Once locked,
Zero Power Operation
– Sophisticated power management circuits reduce power consumed
Compatible with JEDEC standards
– Pinout and software compatible with single-power-supply flash
48-pin TSOP
High Performance
– Access time as fast as 60 ns
– Program time: 4 µs/word typical using accelerated programming
Ultra Low Power Consumption (typical values)
– 2 mA active read current at 1 MHz
erase/program functions in another bank.
data cannot be changed
during inactive periods to nearly zero.
standard
function
Publication Number S29JL032H_00
The S29JL032H is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits
each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears
on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt V
and can also be programmed in standard EPROM programmers.
The device is available with an access time of 60, 70, or 90 ns and is offered in a 48-pin TSOP package.
Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal
read and write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the program and erase operations.
Table 8.2 on page
Revision B
16).
Software Features
Hardware Features
Amendment 8
– 10 mA active read current at 5 MHz
– 200 nA in standby or automatic sleep mode
Cycling Endurance: 1 million cycles per sector typical
Data Retention: 20 years typical
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
– Suspends erase operations to read data from, or program data to, a
Data# Polling and Toggle Bits
– Provides a software method of detecting the status of program or
Unlock Bypass Program Command
– Reduces overall programming time when issuing multiple program
Ready/Busy# Output (RY/BY#)
– Hardware method for detecting program or erase cycle completion
Hardware Reset Pin (RESET#)
– Hardware method of resetting the internal state machine to the read
WP#/ACC Input Pin
– Write protect (WP#) function protects the two outermost boot
– Acceleration (ACC) function accelerates program timing
Sector Protection
– Hardware method to prevent any program or erase operation within
– Temporary Sector Unprotect allows changing data in protected
sector that is not being erased, then resumes the erase operation.
erase cycles
command sequences
mode
sectors regardless of sector protect status
a sector
sectors in-system
Issue Date August 31, 2009
CC
supply,