M38510/20302BEA QP SEMICONDUCTOR, M38510/20302BEA Datasheet
M38510/20302BEA
Specifications of M38510/20302BEA
Available stocks
Related parts for M38510/20302BEA
M38510/20302BEA Summary of contents
Page 1
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, programmable ...
Page 2
Absolute maximum ratings. Supply voltage range .............................................................................. -0 +7 Input voltage range ................................................................................. - Storage temperature range ..................................................................... -65° to +150°C Lead temperature (soldering, 10 ...
Page 3
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this specification and ...
Page 4
Characteristic High level output voltage V Low level output voltage V Input clamp voltage V Maximum collector cut-off I CEX current High impedance (off-state) I OHZ output high current High impedance (off-state) I OLZ output low current High level input ...
Page 5
Interim electrical parameters Final electrical test parameters for unprogrammed devices Final electrical test parameters for programmed devices Group A test requirements Group B end-point electrical parameters when using the method 5005 QCI option Group C end-point electrical parameters Group D ...
Page 6
VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or ...
Page 7
Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows: a. Electrical test requirements shall be as specified in table II herein. b. Subgroups 4, 5, and 6 shall be omitted. ...
Page 8
MIL-M-38510/203E Device type All Case outline E and F Terminal number Terminal symbol GND ...
Page 9
Word Enable no NOTES Not applicable Input may be high level, low ...
Page 10
MIL-M-38510/203E Memory Array Decoder FIGURE 3. Functional block diagram. 10 ...
Page 11
A = Enable buffer B = Output buffer C = Programming driver D = 256 bit memory matrix decoder multiplexer MIL-M-38510/203E FIGURE 3. Functional block diagram – Continued. 11 ...
Page 12
MIL-M-38510/203E CIRCUIT C FIGURE 3. Functional block diagram – Continued. 12 ...
Page 13
MIL-M-38510/203E FIGURE 3. Functional block diagram - Continued 13 ...
Page 14
NOTES: 1. Test table for devices programmed in accordance with an altered item drawing may be replaced by the equivalent tests which apply to the specific program configuration for the resulting read-only memory minimum, including ...
Page 15
NOTE: All other waveform characteristics shall be as specified in table IVA. FIGURE 5a. Typical programming voltage waveforms during programming for circuit A. MIL-M-38510/203E 15 ...
Page 16
NOTES: 1. Output load is 0.2 mA and 12 mA during 7.0 V and 4.0 V check respectively. 2. All other waveform characteristics shall be as specified in table IVB. FIGURE 5b. Typical programming voltage waveforms during programming for circuit ...
Page 17
NOTE: All other waveform characteristics shall be as specified in table IVC. FIGURE 5c. Typical Programming voltage waveforms during programming for circuit C. MIL-M-38510/203E 17 ...
Page 18
MIL-M-38510/203E FIGURE 5d. Programming voltage waveforms during programming for circuit G. 18 ...
Page 19
Programming procedure identification. The programming procedure to be utilized shall be identified by the manufacturer’s circuit designator. 4.7 Programming procedure for circuit A. The programming characteristics in table IVA and the following procedures shall be used for programming the ...
Page 20
Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. Subgroup Symbol MIL- Cases STD-883 E,F method Test no. ...
Page 21
TABLE III. Group A inspection for device type 01, 03 – Continued. Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. ...
Page 22
Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. Subgroup Symbol MIL- Cases STD-883 E,F method Test no. ...
Page 23
Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. Subgroup Symbol MIL- Cases STD-883 E,F method Test no. ...
Page 24
GALPAT (PROGRAMMED PROM) This program will test all bits in the array, the addressing and interaction between bits for ac performance Each bit in the pattern is fixed by being programmed with a “H” or “L”. ...
Page 25
Programming procedure for circuit B. The programming characteristics in table IVB and the following procedures shall be used for programming the device: a. Connect the device in the electrical configuration for programming. The waveforms on figure 5b and the ...
Page 26
To verify programming, after and CE inputs. The programmed output should remain in the “1” state. Again, lower +4.5 ± 0.2 V, and verify that the programmed output remains in the “1” state. ...
Page 27
TABLE IVA. Programming characteristics for circuit A. Parameter Symbol Address input voltage Programming V PH Voltage to V low Program verify V PHV Verify voltage V R Programming input low I ILP current ...
Page 28
TABLE IVB. Programming characteristics for circuit B. Parameter Symbol V required during V CC CCP programming Rise time of program t TLH pulse to data out or program pin Programming voltage on V program pin Output programming V OUT voltage ...
Page 29
TABLE IVC. Programming characteristics for circuit C. Parameter Symbol Programming voltage V CCP Verification upper limit V CCH Verification lower limit V CCL Verify threshold V S Programming supply I CCP current Input voltage high level V “1” Input voltage ...
Page 30
TABLE IVD. Programming characteristics for circuit G. Parameter Symbol Required V for V CC CCP programming I during programming I CC CCP Required output voltage V for programming Output current while I OP programming Rate of voltage change of I ...
Page 31
NOTES (This section contains information of a general or explanatory nature which may be helpful, but is not mandatory.) 6.1 Intended use. Microcircuits conforming to this specification are intended for logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition ...
Page 32
... National Semiconductor 02 7611/ Harris Semiconductor 02 5301-1/ Monolithic Memories 03 SL82S126A/ Lansdale 02, 04 82S129A/ Signetics Corporation * 02, 04 82S129A/ QP Semiconductors 04 SL82S129A/ Lansdale * 6.8 Change from previous issue. Marginal notations are used in this revision to identify changes with respect to the * previous issue. Custodians: Army - CR Navy - EC Air Force - 11 ...