K4H511638C-UCB3 Samsung Semiconductor, K4H511638C-UCB3 Datasheet - Page 13

• Manufacturer Part Number: K4H511638C-UCB3
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H511638C-UCB3

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 185mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

15.0 DDR SDRAM IDD spec table
DDR SDRAM 512Mb C-die (x4, x8, x16)
IDD6
IDD6
IDD6
Symbol
Symbol
Symbol
IDD4W
IDD2Q
IDD2P
IDD2F
IDD3P
IDD3N
IDD4R
IDD7A
IDD4W
IDD4W
IDD2Q
IDD2Q
IDD2P
IDD2F
IDD3P
IDD3N
IDD4R
IDD7A
IDD2P
IDD2F
IDD3P
IDD3N
IDD4R
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Low power
Normal
Normal
Normal
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
B3(DDR333@CL=2.5)
120
150
155
175
220
385
120
160
190
215
220
400
30
25
45
60
30
25
45
60
5
5
3
5
5
3
105
135
140
150
205
360
30
25
30
45
5
5
3
105
135
140
150
205
360
105
140
170
185
205
380
30
25
30
45
30
25
30
45
5
5
3
5
5
3
128Mx4 (K4H510438C)
32Mx16 (K4H511638C)
A2(DDR266@CL=2.0)
64Mx8 (K4H510838C)
125
125
130
195
325
95
30
25
30
45
5
5
3
125
125
130
195
325
130
155
160
195
345
95
30
25
30
45
95
30
25
30
45
5
5
3
5
5
3
B0(DDR266@CL=2.5)
Rev. 1.2 January 2007
125
125
130
195
325
95
30
25
30
45
5
5
3
125
125
130
195
325
130
155
160
195
345
95
30
25
30
45
95
30
25
30
45
5
5
3
5
5
3
DDR SDRAM
(V
DD
=2.7V, T = 10°C)
Unit Notes
Unit Notes
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA