MT49H32M9BM-25 Micron Technology Inc, MT49H32M9BM-25 Datasheet - Page 51

• Manufacturer Part Number: MT49H32M9BM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9BM-25

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 27:
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
COMMAND
ADDRESS
QVLD
QK#
DK#
CK#
DM
CK
QK
DK
DQ
Bank a,
Add n
READ
T0
READ-to-WRITE
Notes:
NOP
T1
1. DO an = data-out from bank a and address n.
2. DI bn = data-in for bank b and address n.
3. Three subsequent elements of each burst follow DI bn and each DO an.
4. BL = 4.
5. Nominal conditions are assumed for specifications not defined.
288Mb: x9, x18, x36 2.5V V
WRITE
Bank b,
Add n
T2
WL = RL + 1 = 5
RL = 4
NOP
T3
NOP
50
T4
DO
an
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T5
EXT
, 1.8V V
NOP
T6
DD
, HSTL, CIO, RLDRAM II
©2003 Micron Technology, Inc. All rights reserved.
NOP
T7
DI
bn
TRANSITIONING DATA
Operations
NOP
NOP
T8
DON’T CARE