IS42S16100B-6T-TR ISSI, Integrated Silicon Solution Inc, IS42S16100B-6T-TR Datasheet - Page 29
IS42S16100B-6T-TR
Manufacturer Part Number
IS42S16100B-6T-TR
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S16100B-6T-TR.pdf
(78 pages)
Specifications of IS42S16100B-6T-TR
Organization
1Mx16
Density
16Mb
Address Bus
12b
Access Time (max)
6/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
50
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
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IS42S16100B
Integrated Silicon Solution, Inc. — www.issi.com —
R e v . A
10/07/03
Interval Between Read and Write Commands
A read command can be interrupted and a new write
command executed while the read cycle is in progress,
i.e., before that cycle completes. Data corresponding to
the new write command can be input at the point new
write command is executed. To prevent collision
between input and output data at the DQn pins during
this operation, the
CAS latency = 2, 3, burstlength = 4
COMMAND
U/LDQM
CLK
DQ
READ (CA=A, BANK 0)
READ A0
HI-Z
D
WRITE B0
IN
t
CCD
B0
WRITE (CA=B, BANK 0)
D
IN
B1
1-800-379-4774
D
output data must be masked using the U/LDQM pins. The
interval (t
one clock cycle.
The selected bank must be set to the active state before
executing this command.
IN
B2
CCD
D
IN
) between these commands must be at least
B3
ISSI
29
®
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