IS42S16100B-6T-TR ISSI, Integrated Silicon Solution Inc, IS42S16100B-6T-TR Datasheet - Page 26

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IS42S16100B-6T-TR

Manufacturer Part Number
IS42S16100B-6T-TR
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S16100B-6T-TR

Organization
1Mx16
Density
16Mb
Address Bus
12b
Access Time (max)
6/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
50
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
26
IS42S16100B
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in the
precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (t
precharge operation starts one clock period after the last
burst data input.
CAS latency = 2, burstlength = 4
CAS latency = 3, burstlength = 4
COMMAND
COMMAND
CLK
CLK
DQ
DQ
DAL
WRITE WITH AUTO-PRECHARGE
WRITE WITH AUTO-PRECHARGE
) is t
RP
WRITE A0
WRITE A0
D
D
plus one CLK period. That is, the
IN
IN
(BANK 0)
(BANK 0)
0
0
D
D
IN
IN
1
1
DAL
Integrated Silicon Solution, Inc. — www.issi.com —
) between the
D
D
IN
IN
2
2
D
D
IN
IN
3
3
Therefore, the selected bank can be made active after a
delay of t
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
CAS
CAS
CAS
CAS
CAS Latency
PRECHARGE START
PRECHARGE START
DAL
t
DAL
t
t
.
DAL
RP
t
t
DAL
ACT 0
RP
1CLK
+t
3
RP
ISSI
1-800-379-4774
1CLK
+t
ACT 0
2
RP
R e v . A
10/07/03
®

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