MT47H32M16HR-3 IT:F Micron Technology Inc, MT47H32M16HR-3 IT:F Datasheet - Page 95
![MICMT47H32M16HR-3_IT:F 32MBX16 DDR2](/photos/31/34/313419/mfg557-84-fbga_sml.jpg)
MT47H32M16HR-3 IT:F
Manufacturer Part Number
MT47H32M16HR-3 IT:F
Description
MICMT47H32M16HR-3_IT:F 32MBX16 DDR2
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-3_ITF.pdf
(132 pages)
Specifications of MT47H32M16HR-3 IT:F
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
- Current page: 95 of 132
- Download datasheet (10Mb)
Figure 47: READ Interrupted by READ
Figure 48: READ-to-WRITE
READ with Precharge
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
CK#
A10
CK#
DQ
DQ
CK
CK
READ 1
Valid 4
ACT n
T0
T0
Notes:
Notes:
READ n
T1
t CCD
NOP 2
T1
CL = 3 (AL = 0)
t RCD = 3
A READ burst may be followed by a PRECHARGE command to the same bank, provided
auto precharge is not activated. The minimum READ-to-PRECHARGE command spac-
ing to the same bank has two requirements that must be satisfied: AL + BL/2 clocks and
t
prefetch of a READ command to the PRECHARGE command. For BL = 4, this is the time
from the actual READ (AL after the READ command) to PRECHARGE command. For
BL = 8, this is the time from AL + 2 × CK after the READ-to-PRECHARGE command.
Following the PRECHARGE command, a subsequent command to the same bank can-
RTP.
1. BL = 8 required; auto precharge must be disabled (A10 = LOW).
2. NOP or COMMAND INHIBIT commands are valid. PRECHARGE command cannot be is-
3. Interrupting READ command must be issued exactly 2 ×
4. READ command can be issued to any valid bank and row address (READ command at T0
5. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the in-
6. Example shown uses AL = 0; CL = 3, BL = 8, shown with nominal
1. BL = 4; CL = 3; AL = 2.
2. Shown with nominal
AL = 2
NOP
T2
sued to banks used for READs at T0 and T2.
and T2 can be either same bank or different bank).
terrupting READ command.
t
READ 3
Valid 5
Valid 4
RTP is the minimum time from the rising clock edge that initiates the last 4-bit
T2
NOP
T3
RL = 5
NOP 2
T3
CL = 3 (AL = 0)
DO
NOP
T4
CL = 3
DO
t
AC,
Valid
T4
WRITE
DO
95
t
T5
DQSCK, and
DO
Valid
T5
NOP
T6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DO
DO
n
t
DQSQ.
512Mb: x4, x8, x16 DDR2 SDRAM
n + 1
DO
WL = RL - 1 = 4
DO
NOP
Valid
T7
T6
n + 2
DO
DO
n + 3
DO
DO
NOP
T8
Valid
T7
t
CK from previous READ.
DO
Transitioning Data
Transitioning Data
© 2004 Micron Technology, Inc. All rights reserved.
NOP
T9
DI
n
DO
t
AC,
Valid
T8
n + 1
DI
DO
t
DQSCK, and
NOP
T10
n + 2
DI
DO
n + 3
Valid
DI
T9
Don’t Care
Don’t Care
NOP
T11
READ
t
DQSQ.
Related parts for MT47H32M16HR-3 IT:F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MT48LC8M8A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC2M32B2P-55:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 5.5NS 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC2M32B2P-5:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 200MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC16M4A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC8M16A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48H8M32LFB5-75:H](/images/manufacturer_photos/0/4/441/micron_technology_inc_tmb.jpg)
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 90VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC16M8A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC32M8A2P-7E:D](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT46V64M8P-6T:F](/photos/7/22/72288/mfg557-66-tsop_tmb.jpg)
Part Number:
Description:
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2P-6:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 167MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2P-7:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48H16M16LFBF-75:H](/photos/31/34/313423/557-54-vfbga_tmb.jpg)
Part Number:
Description:
SDRAM 256M-BIT 1.8V 54-PIN VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2TG-7:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC8M16LFB4-8:G](/photos/7/22/72286/557-54-fbga_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48V8M16LFB4-8:G](/photos/7/22/72286/557-54-fbga_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer:
Micron Technology Inc
Datasheet: