MT47H32M16HR-3 IT:F Micron Technology Inc, MT47H32M16HR-3 IT:F Datasheet - Page 119
MT47H32M16HR-3 IT:F
Manufacturer Part Number
MT47H32M16HR-3 IT:F
Description
MICMT47H32M16HR-3_IT:F 32MBX16 DDR2
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-3_ITF.pdf
(132 pages)
Specifications of MT47H32M16HR-3 IT:F
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 69: READ-to-Power-Down or Self Refresh Entry
Figure 70: READ with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
DQS, DQS#
Command
DQS, DQS#
Command
Address
Address
CK#
CKE
A10
DQ
CK
CK#
CKE
A10
DQ
CK
Valid
READ
T0
Valid
READ
T0
Notes:
Notes:
NOP
T1
NOP
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
T1
RL = 3
entry is at T6.
entry is at T6.
RL = 3
NOP
T2
NOP
T2
NOP
T3
NOP
T3
DO
119
DO
DO
Valid
DO
T4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
DO
T4
512Mb: x4, x8, x16 DDR2 SDRAM
DO
DO
Valid
T5
DO
Valid
T5
Transitioning Data
Power-down 2 or
self refresh entry
Transitioning Data
NOP 1
self refresh 2 entry
Power-down or
Power-Down Mode
T6
© 2004 Micron Technology, Inc. All rights reserved.
NOP 1
T6
t CKE (MIN)
t CKE (MIN)
T7
Don’t Care
Don’t Care
T7
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