K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 8
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K4T1G164QE-HCE6000
Manufacturer Part Number
K4T1G164QE-HCE6000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet
1.K4T1G164QE-HCE6000.pdf
(45 pages)
Specifications of K4T1G164QE-HCE6000
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
(Post reflow 0.50 ± 0.05)
60-∅0.45 Solder ball
0.2 M A B
(Datum A)
(Datum B)
3.4 FBGA Package Dimension (x4/x8)
#A1
C
D
G
H
A
B
E
F
K
L
J
9
8
0.80
7
0.80 x 8 = 6. 40
7.50 ± 0.10
7.50 ± 0.10
6
(1.90)
5
1.60
8 of 45
4
3.20
(0.95)
3
2
1
MOLDING AREA
A
# A1 INDEX MARK
B
0.35±0.05
1.10±0.10
Rev. 1.1 December 2008
DDR2 SDRAM