K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K4T1G164QE-HCE6000
Manufacturer Part Number
K4T1G164QE-HCE6000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet
1.K4T1G164QE-HCE6000.pdf
(45 pages)
Specifications of K4T1G164QE-HCE6000
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
Note : V
V
DDL
DDQ
G
M
A
B
C
D
E
F
H
K
L
N
P
R
J
and V
, V
SS
3.3 x16 package pinout (Top View) : 84ball FBGA Package
Top view
(See the balls through package)
Ball Locations (x16)
DQ14
DQ12
, and V
V
V
V
SSDL
DQ6
DQ4
BA2
V
V
V
V
DDQ
DDQ
DDL
1
DD
DD
SS
DD
Populated ball
Ball not populated
are power and ground for the DLL. It is recommended that they be isolated on the device from V
SSQ
.
A10/AP
V
V
V
V
V
CKE
DQ9
DQ1
BA0
A12
NC
NC
A3
A7
SSQ
SSQ
SSQ
SSQ
REF
2
DQ11
V
V
UDM
LDM
DQ3
BA1
V
V
V
WE
NC
A1
A5
A9
DDQ
DDQ
3
SS
SS
SS
7 of 45
4
5
M
A
B
C
D
E
F
G
H
K
N
P
R
J
L
6
1
UDQS
LDQS
V
DQ10
V
V
V
V
DQ2
RAS
CAS
A11
SSDL
NC
2
A2
A6
SSQ
DDQ
SSQ
DDQ
7
3
4
UDQS
LDQS
V
V
V
V
DQ8
DQ0
5
CK
CK
NC
CS
A0
A4
A8
SSQ
SSQ
SSQ
SSQ
8
6
7
8
DQ15
DQ13
V
V
V
V
ODT
DQ7
DQ5
V
V
V
DDQ
DDQ
DDQ
DDQ
Rev. 1.1 December 2008
9
DD
DD
SS
9
DDR2 SDRAM
DD
,