K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 6
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K4T1G164QE-HCE6000
Manufacturer Part Number
K4T1G164QE-HCE6000
Description
Manufacturer
Samsung Semiconductor
Type
DDR2 SDRAMr
Datasheet
1.K4T1G164QE-HCE6000.pdf
(45 pages)
Specifications of K4T1G164QE-HCE6000
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
K4T1G084QE
K4T1G164QE
K4T1G044QE
Note :
1. Pins B3 and A2 have identical capacitances as pins B7 and A8.
2. For a Read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and
3. The function of DM or RDQS/RDQS is enabled by EMRS command.
4. V
input data masking function is disabled.
V
DDL
SS
, and V
and V
G
A
B
C
D
E
F
H
K
L
J
SSQ
SSDL
3.2 x8 package pinout (Top View) : 60ball FBGA Package
Top view
(See the balls through package)
.
Ball Locations (x8)
V
V
DQ6
DQ4
BA2
V
V
V
are power and ground for the DLL. It is recommended that they be isolated on the device from V
DDQ
DDL
1
DD
SS
DD
Populated ball
Ball not populated
NU/RDQS
A10/AP
V
V
V
CKE
DQ1
BA0
A12
A3
A7
SSQ
SSQ
REF
2
DM/RDQS
V
DQ3
BA1
V
V
WE
NC
A1
A5
A9
DDQ
3
SS
SS
6 of 45
4
5
A
B
C
D
E
G
H
K
F
J
L
6
1
V
V
V
DQS
DQ2
RAS
CAS
A11
SSDL
NC
2
A2
A6
SSQ
DDQ
7
3
4
V
V
DQS
DQ0
5
A13
CK
CK
CS
A0
A4
A8
SSQ
SSQ
8
6
7
8
ODT0
V
V
DQ7
DQ5
V
V
V
DDQ
DDQ
Rev. 1.1 December 2008
9
DD
DD
SS
9
DDR2 SDRAM
DD
,V
DDQ
,